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IKZA50N65RH5英飞凌混合单管

日期:2021-11-02 15:34:07 

650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode

IKZA50N65RH5英飞凌混合单管

650 V, 50 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in Kelvin-emitter TO-247-4 package.

The ultra-fast 650 V hard-switching TRENCHSTOP™ 5 H5 IGBT benefits very low switching losses at switching speed above 30 kHz.  

Combination of ultra-fast TRENCHSTOP™ 5 H5 IGBT with half-rated freewheeling SiC Schottky barrier diodes in CoolSiC™ Hybrid discrete enables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.

The Kelvin emitter TO-247 4pin package provides ultra-low inductance to the gate-emitter control loop further improving switching performance especially at high switching frequencies. 

特征描述

  • Ultra-low switching losses due to the combination of TRENCHSTOP™ 5 and CoolSiC™ diode technology as well as the Kelvin emitter package
  • Very low on-state losses
  • Benchmark switching efficiency in hard switching topologies
  • Simplified PCB design due to the optimized pin-out of the four-pin package
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
  • Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

优势



  • Highest efficiency
  • Increased power density
  • Plug & play replacement of the pure silicon devices
  • Easy upgrade of existing designs for higher efficiency
  • Reduced cooling effort


  • Excellent for paralleling


应用领域






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