650 V, 75 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation Silicon CarbideCoolSiC™ Schottky barrier diode in Kelvin-emitter TO-247-4 package.
The ultra-fast 650 V hard-switching TRENCHSTOP™ 5 H5 IGBT benefits very low switching losses at switching speed above 30 kHz.
Combination of ultra-fast TRENCHSTOP™ 5 H5 IGBT with half-rated freewheeling SiC Schottky barrier diodes in CoolSiC™ Hybrid discrete enables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.
The Kelvin emitter TO-247 4pin package provides ultra-low inductance to the gate-emitter control loop further improving switching performance especially at high switching frequencies.
特征描述
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Ultra-low switching losses due to the combination of TRENCHSTOP™ 5 and CoolSiC™ diode technology as well as the Kelvin emitter package
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Very low on-state losses
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Benchmark switching efficiency in hard switching topologies
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Simplified PCB design due to the optimized pin-out of the four-pin package
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Qualified according to JEDEC for target applications
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Pb-free lead plating; RoHS compliant
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Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
优势
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Highest efficiency
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Increased power density
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Plug & play replacement of the pure silicon devices
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Easy upgrade of existing designs for higher efficiency
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Reduced cooling effort
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Excellent for paralleling
应用领域
指标参数
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Parametrics
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IKZA75N65RH5
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|
Eoff (Hard Switching)
|
0.3 mJ
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Eon
|
0.31 mJ
|
|
IC (@ 100°) max
|
75.0 A
|
|
IC (@ 25°) max
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80.0 A
|
|
ICpuls max
|
300.0 A
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|
IF max
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30.7 A
|
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IFpuls max
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112.5 A
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Ptot max
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395.0 W
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Package
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TO-247-4
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QGate
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168.0 nC
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Switching Frequency min max
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40.0 kHz 100.0 kHz
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Switching Frequency
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TRENCHSTOP™5 40-100 kHz
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Technology
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Silicon Carbide Schottky Diode ; IGBT TRENCHSTOP™ 5
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VCE(sat)
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1.65 V
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VCE max
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650.0 V
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VF
|
1.35 V
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VGE(th)
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4.0 V
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|
td(off)
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180.0 ns
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td(on)
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25.0 ns
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|
tf
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15.0 ns
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|
tr
|
8.0 ns
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18519199285@126.com
18519199285
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