IKW50N65SS5英飞凌混合单管

650 V, 75A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in Kelvin-emitter TO-247-4 package. 

The 650 V hard-switching TRENCHSTOP™ 5 S5 IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in. 

Combination of the TRENCHSTOP™ 5 S5 IGBT technology with the freewheeling SiC Schottky barrier diodes in CoolSiC™ Hybrid discrete further reduces switching losses at almost unchanged dv/dt and di/dt values.

The Kelvin emitter TO-247 4pin package provides ultra-low inductance to the gate-emitter control loop further improving switching performance especially at high switching frequencies.