AIKW50N65RF5英飞凌混合单管

日期：2021-11-02 15:07:31　

Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications

CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC and DC-AC.
The combination of a best-in-class fast-switching IGBT with a very reliable SiC Diode builds a perfect cost-performance trade-off for hard-switching topologies. Due to the Qrr-free unipolar CoolSiC™ Schottky Diode, the Eon of the IGBT will be reduced significantly over silicon-only solutions. This makes the hybrid the first-choice for system-cost-sensitive hard commutation applications, such as Totem Pole topology in Automotive On-Board Charger applications. This results in better margin for low-complexity design-in activities.

特征描述

650V TRENCHSTOP™ 5 IGBT + CoolSiC™ Schottky Diode Gen5
Best-in-class switching and conduction losses
No reverse & forward recovery charge
High operating temp: Tj,max = 175°C
Robust against surge currents
Low gate charge Qg Available from 15A up to 50A

优势

Highest reliability against environmental conditions
Increased system efficiency
Best performance/cost ratio for hard switching topologies (e.g. Totem Pole)
Supporting bi-directional On-Board Charger designs

潜在应用

On-Board Charger
PFC
DC-DC

指标参数

Parametrics	AIKW50N65RF5
Eoff	0.12 mJ
Eon	0.31 mJ
IC (@ 100°) max	46.0 A
IC (@ 25°) max	80.0 A
ICpuls max	150.0 A
IF max	40.0 A
IFpuls max	100.0 A
QGate	109.0 nC
Technology	IGBT TRENCHSTOP™ 5 + CoolSiC Schottky Diode Gen5
VF	1.45 V
td(off)	156.0 ns
td(on)	20.0 ns
tf	13.0 ns
tr	12.0 ns

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