STGSB200M65DF2AG ST 车规IGBT单管

STGSB200M65DF2AG

Automotive-grade trench gate field-stop, 650 V, 200 A low-loss M series IGBT in an ACEPACK SMIT package

ACEPACK SMIT封装中的汽车级沟槽栅极场阻，650 V，200 A低损耗M系列IGBT

产品概述

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Thanks to the DBC substrate, the ACEPACK SMIT surface mounting power package offers a low thermal resistance coupled with a electrical isolated top side thermal pad.

该器件是一种IGBT，采用先进的专有沟槽栅极场阻结构。该设备是M系列IGBT的一部分，代表了逆变器系统性能和效率之间的最佳平衡，其中低损耗和短路功能至关重要。此外，正的VCE（sat）温度系数和紧密的参数分布使并联运行更安全。得益于DBC基板，ACEPACK SMIT表面安装电源包提供了一个低热阻，并配有一个电气隔离的顶部散热片。

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