50 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode
650 V, 75A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in Kelvin-emitter TO-247-4 package.
The 650 V hard-switching TRENCHSTOP™ 5 S5 IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in.
Combination of the TRENCHSTOP™ 5 S5 IGBT technology with the freewheeling SiC Schottky barrier diodes in CoolSiC™ Hybrid discrete further reduces switching losses at almost unchanged dv/dt and di/dt values.
The Kelvin emitter TO-247 4pin package provides ultra-low inductance to the gate-emitter control loop further improving switching performance especially at high switching frequencies.
特征描述
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Ultra-low switching losses due to the combination of TRENCHSTOP™ 5 and CoolSiC™ diode technology as well as the Kelvin emitter package
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Very low on-state losses
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Benchmark switching efficiency in hard switching topologies
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Simplified PCB design due to the optimized pin-out of the four-pin package
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Qualified according to JEDEC for target applications
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Pb-free lead plating; RoHS compliant
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Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
优势
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Highest efficiency
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Reduced cooling effort
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Increased power density
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Plug & play replacement of the pure silicon devices
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Easy upgrade of existing designs for higher efficiency
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Excellent for paralleling
应用领域
指标参数
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Parametrics
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IKZA75N65SS5
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Eoff (Hard Switching)
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0.42 mJ
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Eon
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0.13 mJ
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IC (@ 100°) max
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80.0 A
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IC (@ 25°) max
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80.0 A
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ICpuls max
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300.0 A
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IF max
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57.0 A
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IFpuls max
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225.0 A
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Ptot max
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395.0 W
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Package
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TO-247-4
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QGate
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164.0 nC
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Switching Frequency min max
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10.0 kHz 30.0 kHz
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Switching Frequency
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TRENCHSTOP™5 10-30 kHz
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Technology
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IGBT TRENCHSTOP™ 5 ; Silicon Carbide Schottky Diode
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VCE(sat)
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1.65 V
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VCE max
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650.0 V
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VF
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1.35 V
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VGE(th)
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4.0 V
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td(off)
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155.0 ns
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td(on)
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20.0 ns
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tf
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25.0 ns
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tr
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7.0 ns
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